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AUIRF7640S2TR/TR1
Static @ T J = 25°C (unless otherwise specified)
Parameter Min.
Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
60
–––
––– V
V GS = 0V, I D = 250 μ A
ΔΒ V DSS / Δ T J
Breakdown Voltage Temp. Coefficient
–––
0.1
––– V/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
27
36
m Ω
V GS = 10V, I D = 13A
V GS(th)
Δ V GS(th) / Δ T J
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
3.0
–––
9.3
4.0
-11
–––
5.0 V
––– mV/°C
––– S
V DS = V GS , I D = 25 μ A
V DS = 50V, I D = 13A
R G
Gate Resistance
–––
3.5
5.0
Ω
I DSS
Drain-to-Source Leakage Current
–––
–––
5
μ A
V DS = 60V, V GS = 0V
–––
–––
250
V DS = 48V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100 nA
-100
V GS = 20V
V GS = -20V
Dynamic Characteristics @ T J = 25°C (unless otherwise stated)
Q g
Total Gate Charge
–––
7.3
11
Q gs1
Pre-Vth Gate-to-Source Charge
–––
1.5
–––
V DS = 30V
Q gs2
Q gd
Q godr
Q sw
Q oss
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
C oss
C oss
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
3.0
1.9
3.9
5.3
4.0
12
6.3
6.2
450
160
48
610
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
nC
ns
pF
V GS = 10V
I D = 13A
See Fig. 6 and 17
V DS = 16V, V GS = 0V
V DD = 30V, V GS = 10V
I D = 13A
R G =6.8 Ω
V GS = 0V
V DS = 25V
? = 1.0MHz
V GS = 0V, V DS = 1.0V, f=1.0MHz
V GS = 0V, V DS = 48V, f=1.0MHz
Diode Characteristics @ T J = 25°C (unless otherwise stated)
Parameter
Min.
Typ. Max. Units
Conditions
I S
Continuous Source Current
(Body Diode)
–––
–––
21
A
MOSFET symbol
showing the
D
I SM
Pulsed Source Current
(Body Diode)
–––
–––
84
integral reverse
p-n junction diode.
G
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
26
24
1.3
39
36
V
ns
nC
T J = 25°C, I S = 13A, V GS = 0V
T J = 25°C, I F = 13A, V DD = 25V
di/dt = 100A/ μ s
? Surface mounted on 1 in. square Cu
(still air).
Notes ? through ? are on page 3
2
? Mounted to a PCB with small
clip heatsink (still air)
? Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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